บทที่ 2 Semiconductor and P-N junction

งานนำเสนอเรื่อง: "บทที่ 2 Semiconductor and P-N junction"— ใบสำเนางานนำเสนอ:

1 บทที่ 2 Semiconductor and P-N junction
EEE270 Electronic engineering

2 Semiconductor material
Silicon wafer EEE270 Electronic engineering

3 Semiconductor material
Silicon crystal Sand 25% silicon EEE270 Electronic engineering

4 Semiconductor material
EEE270 Electronic engineering

5 EEE270 Electronic engineering
Silicon atom EEE270 Electronic engineering

6 Intrinsic semiconductor
Silicon Crystal at T= 0 °K EEE270 Electronic engineering

7 EEE270 Electronic engineering
Energy gap EEE270 Electronic engineering

8 EEE270 Electronic engineering
Energy level An electron-volt is the energy of an electron that has been accelerated through a potential difference of 1 volt, and 1eV= 1.6*10-19 joules EEE270 Electronic engineering

9 Intrinsic semiconductor
Silicon Crystal at T > 0 °K EEE270 Electronic engineering

10 The Intrinsic Carrier Concentration
ni is the intrinsic carrier concentration B is a constant related to the specific semiconductor material Eg is the band-gap energy (eV) T is the temperature (°K) k is Boltzmann’s constant (86 x 10-6eV/°K) EEE270 Electronic engineering

11 Electrical current EEE270 Electronic engineering

12 Doping and Extrinsic Semiconductors
EEE270 Electronic engineering

13 Basic silicon doping ขั้นตอนในการแพร่สารเจือเบื้องต้น
หลักการแพร่กระจายของหมึกในนํ้า แสดงการแพร่สารเจือ (Diffusion) เกิดเป็นรอยต่อ P-N EEE270 Electronic engineering

14 Type of doping process เตาแพร่สารเจือที่มีแหล่งจ่ายเป็นของแข็ง
เตาแพร่สารเจือที่มีแหล่งจ่ายเป็นของเหลว เตาแพร่สารเจือที่มีแหล่งจ่ายเป็นแก๊ส การโดปโดยใช้วิธียิงอิออน (Ion-Implantation) EEE270 Electronic engineering

15 N-type semiconductor EEE270 Electronic engineering

16 EEE270 Electronic engineering
P-type semiconductor EEE270 Electronic engineering

17 Thermal equilibrium no = thermal equilibrium concentration of free electron po = thermal equilibrium concentration of hole Silicon Crystal at T > 0 °K EEE270 Electronic engineering

18 Thermal equilibrium (N-type)
EEE270 Electronic engineering

19 Thermal equilibrium (P-type)
EEE270 Electronic engineering

20 Drift and Diffusion Currents
EEE270 Electronic engineering

21 Drift and Diffusion Currents
EEE270 Electronic engineering

22 Drift and Diffusion Currents
EEE270 Electronic engineering

23 Drift and Diffusion Currents
EEE270 Electronic engineering

24 Drift and Diffusion Currents
EEE270 Electronic engineering

25 Drift and Diffusion Currents
EEE270 Electronic engineering

26 Drift and Diffusion Currents
EEE270 Electronic engineering

27 Drift and Diffusion Currents
EEE270 Electronic engineering

28 P-N junction Bell Labs the first transistor in December 1947.
EEE270 Electronic engineering

29 P-N Junction EEE270 Electronic engineering

30 The Equilibrium P-N Junction
EEE270 Electronic engineering

31 The Equilibrium P-N Junction
Barrier potential or Built-in voltage is called thermal voltage, approximately 0.026V at room temperature, T=300 °K EEE270 Electronic engineering

32 Built-in voltage EEE270 Electronic engineering

33 P-N Junction biasing Forward-bias Non-bias Reward-bias
EEE270 Electronic engineering

34 P-N Junction biasing EEE270 Electronic engineering

35 Junction capacitance EEE270 Electronic engineering

36 Reverse-Biased P-N Junction
Reward-bias Cj : Junction Capacitance Cj0 : Junction Capacitance at zero applied voltage VR : Reverse bias voltage Vbi : built-in voltage EEE270 Electronic engineering

37 Forward-Biased P-N Junction
IS : Reverse-bias Saturation current, in the range of to 10-13 VT : Thermal voltage n : emission coefficient or ideality factor, in the range 1  n  2 EEE270 Electronic engineering

38 Forward-Biased P-N Junction
EEE270 Electronic engineering