งานนำเสนอกำลังจะดาวน์โหลด โปรดรอ

งานนำเสนอกำลังจะดาวน์โหลด โปรดรอ

บทที่ 2 Semiconductor and P-N junction 1EEE270 Electronic engineering.

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งานนำเสนอเรื่อง: "บทที่ 2 Semiconductor and P-N junction 1EEE270 Electronic engineering."— ใบสำเนางานนำเสนอ:

1 บทที่ 2 Semiconductor and P-N junction 1EEE270 Electronic engineering

2 Semiconductor material EEE270 Electronic engineering2 Silicon wafer

3 Semiconductor material EEE270 Electronic engineering3 Sand 25% silicon Silicon crystal

4 Semiconductor material EEE270 Electronic engineering4

5 Silicon atom EEE270 Electronic engineering5

6 Intrinsic semiconductor EEE270 Electronic engineering6 Silicon Crystal at T= 0 °K

7 Energy gap EEE270 Electronic engineering7

8 Energy level EEE270 Electronic engineering8 An electron-volt is the energy of an electron that has been accelerated through a potential difference of 1 volt, and 1eV= 1.6* joules

9 Intrinsic semiconductor EEE270 Electronic engineering9 Silicon Crystal at T > 0 °K

10 The Intrinsic Carrier Concentration EEE270 Electronic engineering10 n i is the intrinsic carrier concentration B is a constant related to the specific semiconductor material E g is the band-gap energy (eV) T is the temperature (°K) k is Boltzmann’s constant (86 x eV/°K)

11 Electrical current EEE270 Electronic engineering11

12 Doping and Extrinsic Semiconductors EEE270 Electronic engineering12

13 Basic silicon doping EEE270 Electronic engineering13 ขั้นตอนในการแพร่สารเจือเบื้องต้น แสดงการแพร่สารเจือ (Diffusion) เกิดเป็นรอยต่อ P-N หลักการแพร่กระจายของหมึกในนํ้า

14 Type of doping process EEE270 Electronic engineering14 เตาแพร่สารเจือที่มีแหล่งจ่ายเป็นของแข็งเตาแพร่สารเจือที่มีแหล่งจ่ายเป็นของเหลวเตาแพร่สารเจือที่มีแหล่งจ่ายเป็นแก๊ส การโดปโดยใช้วิธียิงอิออน (Ion-Implantation)

15 N-type semiconductor EEE270 Electronic engineering15

16 P-type semiconductor EEE270 Electronic engineering16

17 Thermal equilibrium EEE270 Electronic engineering17 Silicon Crystal at T > 0 °K n o = thermal equilibrium concentration of free electron p o = thermal equilibrium concentration of hole

18 Thermal equilibrium (N-type) EEE270 Electronic engineering18

19 Thermal equilibrium (P-type) EEE270 Electronic engineering19

20 Drift and Diffusion Currents EEE270 Electronic engineering20

21 Drift and Diffusion Currents EEE270 Electronic engineering21

22 Drift and Diffusion Currents EEE270 Electronic engineering22

23 Drift and Diffusion Currents EEE270 Electronic engineering23

24 Drift and Diffusion Currents EEE270 Electronic engineering24

25 Drift and Diffusion Currents EEE270 Electronic engineering25

26 Drift and Diffusion Currents EEE270 Electronic engineering26

27 Drift and Diffusion Currents EEE270 Electronic engineering27

28 P-N junction EEE270 Electronic engineering28 Bell Labs the first transistor in December 1947.

29 P-N Junction EEE270 Electronic engineering29

30 The Equilibrium P-N Junction EEE270 Electronic engineering30

31 The Equilibrium P-N Junction EEE270 Electronic engineering31 Barrier potential or Built-in voltage is called thermal voltage, approximately 0.026V at room temperature, T=300 °K

32 Built-in voltage EEE270 Electronic engineering32

33 P-N Junction biasing EEE270 Electronic engineering33 Non-bias Forward-bias Reward-bias

34 P-N Junction biasing EEE270 Electronic engineering34

35 Junction capacitance EEE270 Electronic engineering35

36 Reverse-Biased P-N Junction EEE270 Electronic engineering36 Reward-bias C j : Junction Capacitance C j0 : Junction Capacitance at zero applied voltage V R : Reverse bias voltage V bi : built-in voltage

37 Forward-Biased P-N Junction EEE270 Electronic engineering37 Forward-bias I S : Reverse-bias Saturation current, in the range of to V T : Thermal voltage n : emission coefficient or ideality factor, in the range 1  n  2

38 Forward-Biased P-N Junction EEE270 Electronic engineering38


ดาวน์โหลด ppt บทที่ 2 Semiconductor and P-N junction 1EEE270 Electronic engineering.

งานนำเสนอที่คล้ายกัน


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